@prefix rdf: <http://www.w3.org/1999/02/22-rdf-syntax-ns#>.
@prefix rdfs: <http://www.w3.org/2000/01/rdf-schema#>.
@prefix owl: <http://www.w3.org/2002/07/owl#>.
@prefix skos: <http://www.w3.org/2004/02/skos/core#>.
@prefix xl: <http://www.w3.org/2008/05/skos-xl#>.
@prefix rdag1: <http://RDVocab.info/ElementsGr1/>.
@prefix rda: <http://RDVocab.info/ElementsGr2/>.
@prefix rdaa: <http://rdaregistry.info/Elements/a/>.
@prefix frbrent: <http://RDVocab.info/uri/schema/FRBRentitiesRDA/>.
@prefix foaf: <http://xmlns.com/foaf/0.1/>.
@prefix ndl: <http://ndl.go.jp/dcndl/terms/>.
@prefix dct: <http://purl.org/dc/terms/>.

<http://id.ndl.go.jp/auth/ndlna/01102325>
	foaf:primaryTopic <http://id.ndl.go.jp/auth/entity/01102325>;
	rdf:type <http://www.w3.org/2004/02/skos/core#Concept>;
	dct:modified "2007-09-26T15:55:47";
	dct:created "2007-09-26";
	xl:prefLabel [xl:literalForm "大吉, 啓司";ndl:transcription "オオヨシ, ケイジ"@ja-Kana,"Ooyoshi, Keiji"@ja-Latn];
	rdfs:label "大吉, 啓司";
	dct:source "半導体および絶縁体へのイオン注入技術 / 大吉啓司 著","初出資料";
	skos:exactMatch <http://viaf.org/viaf/sourceID/NDL%7C01102325#skos:Concept>;
	skos:inScheme <http://id.ndl.go.jp/auth#personalNames>.

<http://id.ndl.go.jp/auth/entity/01102325>
	rdf:type <http://xmlns.com/foaf/0.1/Person>;
	foaf:name "大吉啓司";
	rda:dateOfBirth "1961";
	rda:biographicalInformation "(独) 物質材料研究機構物質研究所研究員".