@prefix rdf: <http://www.w3.org/1999/02/22-rdf-syntax-ns#>. @prefix rdfs: <http://www.w3.org/2000/01/rdf-schema#>. @prefix owl: <http://www.w3.org/2002/07/owl#>. @prefix skos: <http://www.w3.org/2004/02/skos/core#>. @prefix xl: <http://www.w3.org/2008/05/skos-xl#>. @prefix rdag1: <http://RDVocab.info/ElementsGr1/>. @prefix rda: <http://RDVocab.info/ElementsGr2/>. @prefix rdaa: <http://rdaregistry.info/Elements/a/>. @prefix frbrent: <http://RDVocab.info/uri/schema/FRBRentitiesRDA/>. @prefix foaf: <http://xmlns.com/foaf/0.1/>. @prefix ndl: <http://ndl.go.jp/dcndl/terms/>. @prefix dct: <http://purl.org/dc/terms/>. <http://id.ndl.go.jp/auth/ndlsh/001176233> rdf:type <http://www.w3.org/2004/02/skos/core#Concept>; dct:modified "2017-11-07T10:35:00"; dct:created "2014-07-23"; xl:prefLabel [xl:literalForm "CMOS"]; rdfs:label "CMOS"; xl:altLabel [xl:literalForm "相補型金属酸化物半導体";ndl:transcription "ソウホガタ キンゾク サンカブツ ハンドウタイ"@ja-Kana,"Sohogata kinzoku sankabutsu handotai"@ja-Latn],[xl:literalForm "相補型MOS";ndl:transcription "ソウホガタ MOS"@ja-Kana,"Sohogata MOS"@ja-Latn],[xl:literalForm "CMOSデバイス";ndl:transcription "CMOS デバイス"@ja-Kana,"CMOS debaisu"@ja-Latn],[xl:literalForm "Complementary MOS"],[xl:literalForm "Metal oxide semiconductors, Complementary"]; dct:source "微細CMOSトランジスタ技術, 2008.2","情報・知識 imidas (20140723)"; skos:inScheme <http://id.ndl.go.jp/auth#topicalTerms>; owl:sameAs <http://id.ndl.go.jp/auth/ndlsh/CMOS>; skos:relatedMatch <http://id.ndl.go.jp/class/ndlc/ND371>,<http://id.ndl.go.jp/class/ndlc/ND386>,<http://id.ndl.go.jp/class/ndc10/549.7>,<http://id.ndl.go.jp/class/ndc10/549.84>,<http://id.ndl.go.jp/class/ndc9/549.7>,<http://id.ndl.go.jp/class/ndc9/549.8>; skos:note "当件名新設 (2014年7月23日) 以前の整理では, 「集積回路」「半導体」等を付与"; skos:broader <http://id.ndl.go.jp/auth/ndlsh/00572448>,<http://id.ndl.go.jp/auth/ndlsh/00562913>; skos:closeMatch <http://id.loc.gov/authorities/subjects/sh85084067>. <http://id.ndl.go.jp/auth/ndlsh/00572448> rdfs:label "集積回路". <http://id.ndl.go.jp/auth/ndlsh/00562913> rdfs:label "半導体".