@prefix rdf: <http://www.w3.org/1999/02/22-rdf-syntax-ns#>.
@prefix rdfs: <http://www.w3.org/2000/01/rdf-schema#>.
@prefix owl: <http://www.w3.org/2002/07/owl#>.
@prefix skos: <http://www.w3.org/2004/02/skos/core#>.
@prefix xl: <http://www.w3.org/2008/05/skos-xl#>.
@prefix rdag1: <http://RDVocab.info/ElementsGr1/>.
@prefix rda: <http://RDVocab.info/ElementsGr2/>.
@prefix rdaa: <http://rdaregistry.info/Elements/a/>.
@prefix frbrent: <http://RDVocab.info/uri/schema/FRBRentitiesRDA/>.
@prefix foaf: <http://xmlns.com/foaf/0.1/>.
@prefix ndl: <http://ndl.go.jp/dcndl/terms/>.
@prefix dct: <http://purl.org/dc/terms/>.

<http://id.ndl.go.jp/auth/ndlsh/001176233>
	rdf:type <http://www.w3.org/2004/02/skos/core#Concept>;
	dct:modified "2017-11-07T10:35:00";
	dct:created "2014-07-23";
	xl:prefLabel [xl:literalForm "CMOS"];
	rdfs:label "CMOS";
	xl:altLabel [xl:literalForm "相補型金属酸化物半導体";ndl:transcription "ソウホガタ キンゾク サンカブツ ハンドウタイ"@ja-Kana,"Sohogata kinzoku sankabutsu handotai"@ja-Latn],[xl:literalForm "相補型MOS";ndl:transcription "ソウホガタ MOS"@ja-Kana,"Sohogata MOS"@ja-Latn],[xl:literalForm "CMOSデバイス";ndl:transcription "CMOS デバイス"@ja-Kana,"CMOS debaisu"@ja-Latn],[xl:literalForm "Complementary MOS"],[xl:literalForm "Metal oxide semiconductors, Complementary"];
	dct:source "微細CMOSトランジスタ技術, 2008.2","情報・知識 imidas (20140723)";
	skos:inScheme <http://id.ndl.go.jp/auth#topicalTerms>;
	owl:sameAs <http://id.ndl.go.jp/auth/ndlsh/CMOS>;
	skos:relatedMatch <http://id.ndl.go.jp/class/ndlc/ND371>,<http://id.ndl.go.jp/class/ndlc/ND386>,<http://id.ndl.go.jp/class/ndc10/549.7>,<http://id.ndl.go.jp/class/ndc10/549.84>,<http://id.ndl.go.jp/class/ndc9/549.7>,<http://id.ndl.go.jp/class/ndc9/549.8>;
	skos:note "当件名新設 (2014年7月23日) 以前の整理では, 「集積回路」「半導体」等を付与";
	skos:broader <http://id.ndl.go.jp/auth/ndlsh/00572448>,<http://id.ndl.go.jp/auth/ndlsh/00562913>;
	skos:closeMatch <http://id.loc.gov/authorities/subjects/sh85084067>.

<http://id.ndl.go.jp/auth/ndlsh/00572448> rdfs:label "集積回路".
<http://id.ndl.go.jp/auth/ndlsh/00562913> rdfs:label "半導体".