窒化物ワイドギャップ半導体の現状と展望 : バルクGaN単結晶成長技術開発の観点から (省エネ創エネを牽引(けんいん)する窒化物ワイドギャップ半導体)
Digital data available（Japan Link Center）
Begin reading now
CiNii Research
Holdings of Libraries in Japan
This page shows libraries in Japan other than the National Diet Library that hold the material.
Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.
other
CiNii Research
Search ServiceDigitalYou can check the holdings of institutions and databases with which CiNii Research is linked at the site of CiNii Research.
Bibliographic Record
You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.
- Material Type
- 記事
- Author/Editor
- 天野 浩
- Series Title
- Author Heading
- Alternative Title
- Progress and prospect of the growth of wide-band-gap group Ⅲ nitrides : Development of the growth method for single-crystal bulk GaN
- Periodical title
- 応用物理
- No. or year of volume/issue
- 81(6):2012.6
- Volume
- 81
- Issue
- 6