The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method (電子部品・材料)

The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method

(電子部品・材料)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113(40):2013.5.16・17

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Material Type: 記事
Title: The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
Author/Editor: Muthusamy OMPRAKASH
Mukannan ARIVANANDHAN
Raman ARUNKUMAR 他
Series Title: 電子部品・材料
Author Heading: Muthusamy OMPRAKASH
Mukannan ARIVANANDHAN
Raman ARUNKUMAR
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 113(40):2013.5.16・17
Volume: 113
Issue: 40
Pages: 27-31
Publication date of volume/issue (W3CDTF): 2013-05
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: eng
Subject Heading: Heat and mass transfer
Growth from solutions
Silicon-Germanium alloy
In-situ observation
NDLC: ZN33
Target Audience: 一般
Report No. (Article): CPM2013-6
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024582739
http://id.ndl.go.jp/bib/024582739
Bibliographic Record Category (NDL): 632