Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal-Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)

Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal-Organic Vapor Phase Epitaxy

(Special Issue : Recent Advances in Nitride Semiconductors)

Call No. (NDL): Z53-A375
Bibliographic ID of National Diet Library: 024786161

Material type: 記事

Author: Tomoe Yayamaほか

Publisher: Tokyo : The Japan Society of Applied Physics

Publication date: 2013-08

Material Format: Paper

Journal name: Japanese journal of applied physics : JJAP 52(8)(2):2013.8

Publication Page: p.08JC02-1-3

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Paper

Material Type: 記事
Title: Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal-Organic Vapor Phase Epitaxy
Author/Editor: Tomoe Yayama
Yoshihiro Kangawa
Koichi Kakimoto
Series Title: Special Issue : Recent Advances in Nitride Semiconductors
Author Heading: Tomoe Yayama
Yoshihiro Kangawa
Koichi Kakimoto
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 52(8)(2):2013.8
Volume: 52
Issue: 8
Sequential issue number: 2
Pages: 08JC02-1-3
Publication date of volume/issue (W3CDTF): 2013-08
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024786161
http://id.ndl.go.jp/bib/024786161
Bibliographic Record Category (NDL): 632