原子層堆積法を用いて...

原子層堆積法を用いて製膜した極薄絶縁層を用いた有機電界効果トランジスタ (小特集 真空プロセスで創る有機デバイス研究・開発の最前線)

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原子層堆積法を用いて製膜した極薄絶縁層を用いた有機電界効果トランジスタ(小特集 真空プロセスで創る有機デバイス研究・開発の最前線)

Call No. (NDL)
Z16-474
Bibliographic ID of National Diet Library
026236427
Material type
記事
Author
小野 新平
Publisher
東京 : 日本真空協会
Publication date
2015-03
Material Format
Paper
Journal name
Journal of the Vacuum Society of Japan = 真空 58(3):2015.3
Publication Page
p.104-108
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Paper Digital

Material Type
記事
Author/Editor
小野 新平
Author Heading
Alternative Title
High Performance Organic Field-Effect Transistors with High-k Insulator Deposited Directly onto the Organic Semiconductor
Periodical title
Journal of the Vacuum Society of Japan = 真空
No. or year of volume/issue
58(3):2015.3
Volume
58
Issue
3