基板中RFリーク電流の温度依存性を考慮したSi基板上GaNHEMTの半物理大信号モデル (マイクロ波)

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基板中RFリーク電流の温度依存性を考慮したSi基板上GaNHEMTの半物理大信号モデル

(マイクロ波)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
027793211
Material type
記事
Author
山口 裕太郎ほか
Publisher
東京 : 電子情報通信学会
Publication date
2016-11
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 116(310):2016.11.17・18
Publication Page
p.33-38
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Paper

Material Type
記事
Author/Editor
山口 裕太郎
新庄 真太郎
山中 宏治
大石 敏之
Series Title
Alternative Title
Semi-Physical Large Signal Model of GaN HEMTs on Si considering temperature dependence of RF leakage current in Substrates
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
116(310):2016.11.17・18
Volume
116
Issue
310