転写技術を用いたSi...

転写技術を用いたSi基板上の表面照射型InGaAs PhotoFETsによる赤外線検出 (特集 Society 5.0時代を創出する異種材料集積半導体デバイス)

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転写技術を用いたSi基板上の表面照射型InGaAs PhotoFETsによる赤外線検出(特集 Society 5.0時代を創出する異種材料集積半導体デバイス)

Call No. (NDL)
Z16-474
Bibliographic ID of National Diet Library
031304382
Material type
記事
Author
大石 和明ほか
Publisher
東京 : 日本表面科学会 ; 2018-
Publication date
2021-02
Material Format
Paper
Journal name
表面と真空 = Vacuum and surface science / 日本表面科学会, 日本真空学会 編 64(2):2021.2
Publication Page
p.74-79
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Paper Digital

Material Type
記事
Author/Editor
大石 和明
石井 裕之
張 文馨
清水 鉄司
石井 寛仁
藤代 博記
遠藤 聡
前田 辰郎
Alternative Title
SWIR Detection of Front Side Illumination InGaAs PhotoFETs on Si Substrate through Layer Transfer Technology
Periodical title
表面と真空 = Vacuum and surface science / 日本表面科学会, 日本真空学会 編
No. or year of volume/issue
64(2):2021.2
Volume
64
Issue
2