InN系窒化物半導体超薄膜非対称量子井戸構造の新規光デバイス開発に向けて--発光素子から太陽電池への展開 (電子デバイス)

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InN系窒化物半導体超薄膜非対称量子井戸構造の新規光デバイス開発に向けて--発光素子から太陽電池への展開

(電子デバイス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
10478075
Material type
記事
Author
草部 一秀ほか
Publisher
東京 : 電子情報通信学会
Publication date
2009-11
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 109(288) 2009.11.19・20
Publication Page
p.79~82
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Paper

Material Type
記事
Author/Editor
草部 一秀
石谷 善博
吉川 明彦
Series Title
Alternative Title
Proposal of ultrathin InN-based asymmetric structure 3-N QWs for novel photonic devices: development from emitters into solar cells
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
109(288) 2009.11.19・20
Volume
109
Issue
288