RF-MBE法によるr面(10-12)Sapphire基板上半極性面InNの結晶成長 (特集 電気関係学会関西支部連合大会)

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RF-MBE法によるr面(10-12)Sapphire基板上半極性面InNの結晶成長(特集 電気関係学会関西支部連合大会)

Call No. (NDL)
Z16-795
Bibliographic ID of National Diet Library
10481867
Material type
記事
Author
中谷 佳津彦ほか
Publisher
東京 : 電気学会
Publication date
2009-11
Material Format
Paper
Journal name
電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems 129(11) 2009.11
Publication Page
p.1974~1977
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Paper Digital

Material Type
記事
Author/Editor
中谷 佳津彦
川島 圭介
山口 智広 他
Alternative Title
Growth of semipolar InN on r-plane (10-12) sapphire by RF-MBE
Periodical title
電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems
No. or year of volume/issue
129(11) 2009.11
Volume
129
Issue
11