単結晶グラフェン基板...

単結晶グラフェン基板の創製に向けたSiC上エピタキシャル少数層グラフェンの層数解析 (小特集 グラフェンの創製と応用--最近の動向)

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単結晶グラフェン基板の創製に向けたSiC上エピタキシャル少数層グラフェンの層数解析(小特集 グラフェンの創製と応用--最近の動向)

Call No. (NDL)
Z16-474
Bibliographic ID of National Diet Library
10606205
Material type
記事
Author
日比野 浩樹ほか
Publisher
東京 : 日本真空協会
Publication date
2010-02
Material Format
Paper
Journal name
Journal of the Vacuum Society of Japan = 真空 53(2) 2010.2
Publication Page
p.101~108
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Paper Digital

Material Type
記事
Author/Editor
日比野 浩樹
影島 博之
永瀬 雅夫
Alternative Title
Analysis of number of layers in epitaxial few-layer graphene grown on SiC towards single-crystal graphene substrate
Periodical title
Journal of the Vacuum Society of Japan = 真空
No. or year of volume/issue
53(2) 2010.2
Volume
53
Issue
2