Evaluation of 1/f noise characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET (Electron devices)

Evaluation of 1/f noise characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET

(Electron devices)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 110(109) 2010.6-7.30-2

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Material Type: 記事
Title: Evaluation of 1/f noise characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET
Author/Editor: Takuya Imamoto
Takeshi Sasaki
Tetsuo Endoh
Series Title: Electron devices
Author Heading: Takuya Imamoto
Takeshi Sasaki
Tetsuo Endoh
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 110(109) 2010.6-7.30-2
Volume: 110
Issue: 109
Pages: 195～198
Publication date of volume/issue (W3CDTF): 2010
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: eng
Subject Heading: 1/f noise
MOSFET
High-k
Random Telegraph Signal
RTS
NDLC: ZN33
Target Audience: 一般
Report No. (Article): ED2010-95
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 10752459
http://id.ndl.go.jp/bib/10752459
Bibliographic Record Category (NDL): 632