High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)

High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

(Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)

Call No. (NDL): Z53-A375
Bibliographic ID of National Diet Library: 10947871

Material type: 記事

Author: Takayuki Sugiyamaほか

Publisher: Tokyo : The Japan Society of Applied Physics

Publication date: 2011-01

Material Format: Paper

Journal name: Japanese journal of applied physics : JJAP 50(1) (2) 2011.1

Publication Page: p.01AD03-1～3

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Paper

Material Type: 記事
Title: High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
Author/Editor: Takayuki Sugiyama
Hiroshi Amano
Daisuke Iida 他
Series Title: Special issue: Advanced plasma science and its applications for nitrides and nanomaterials
Author Heading: Takayuki Sugiyama
Hiroshi Amano
Daisuke Iida
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 50(1) (2) 2011.1
Volume: 50
Issue: 1
Other Volume: 2
Pages: 01AD03-1～3
Publication date of volume/issue (W3CDTF): 2011-01
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 10947871
http://id.ndl.go.jp/bib/10947871
Bibliographic Record Category (NDL): 632