Volume number38(2) 2011
GaAsN気相エピタ...

GaAsN気相エピタキシーにおける混晶組成の理論的検討 (特集 どのように結晶成長現象をモデル化するか?)

Icons representing 記事

GaAsN気相エピタキシーにおける混晶組成の理論的検討(特集 どのように結晶成長現象をモデル化するか?)

Call No. (NDL)
Z15-339
Bibliographic ID of National Diet Library
11196074
Material type
記事
Author
川野 潤ほか
Publisher
大阪 : 日本結晶成長学会
Publication date
2011
Material Format
Paper
Journal name
日本結晶成長学会誌 = Journal of the Japanese Association for Crystal Growth 38(2) 2011
Publication Page
p.128~136
View All

Holdings of Libraries in Japan

This page shows libraries in Japan other than the National Diet Library that hold the material.

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

  • CiNii Research

    Search Service
    Digital
    You can check the holdings of institutions and databases with which CiNii Research is linked at the site of CiNii Research.

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Paper Digital

Material Type
記事
Author/Editor
川野 潤
寒川 義裕
屋山 巴 他
Alternative Title
Theoretical analysis for the composition of GaAsN grown by vapor phase epitaxy
Periodical title
日本結晶成長学会誌 = Journal of the Japanese Association for Crystal Growth
No. or year of volume/issue
38(2) 2011
Volume
38
Issue
2