The Microstructure of As Precipitates in Si Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy

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The Microstructure of As Precipitates in Si Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
4371423
Material type
記事
Author
Li Zen Hsiehほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
1997-11
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 36(11) 1997.11
Publication Page
p.6614~6619
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Detailed bibliographic record

Summary, etc.:

The structure relationship of the As precipitates found in post-annealed Si δ -doped GaAs layers grown by low-temperature molecular beam epitaxy is el...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Li Zen Hsieh
Jin Hua Huang
Zi Ang Su 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
36(11) 1997.11
Volume
36
Issue
11
Pages
6614~6619
Publication date of volume/issue (W3CDTF)
1997-11