Crystallization of Amorphous GeSe2 Semiconductor by Isothermal Annealing without Light Radiation

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Crystallization of Amorphous GeSe2 Semiconductor by Isothermal Annealing without Light Radiation

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
5320034
Material type
記事
Author
Kentaro Sakaiほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2000-03
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 39(3A) (通号 515) 2000.03
Publication Page
p.1058~1061
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Detailed bibliographic record

Summary, etc.:

The thermal-induced crystallization process of melt-quenched amorphous GeSe<FONT SIZE="-1"><SUB>2</SUB></FONT> was studied. The low-temperature (LT) f...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Kentaro Sakai
Kenji Yoshino
Atsuhiko Fukuyama 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
39(3A) (通号 515) 2000.03
Volume
39
Issue
3A
Sequential issue number
515
Pages
1058~1061