Effects of GaP Cap Layer Growth on Self-Assembled InAs Islands Grown on GaP (001) by Organometallic Vapor Phase Epitaxy

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Effects of GaP Cap Layer Growth on Self-Assembled InAs Islands Grown on GaP (001) by Organometallic Vapor Phase Epitaxy

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
5382664
Material type
記事
Author
Shingo Fuchiほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2000-06
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 39(6A) (通号 521) 2000.06
Publication Page
p.3290~3293
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Detailed bibliographic record

Summary, etc.:

We have fabricated GaP/InAs islands/GaP structures using various growth sequences for the GaP cap layer, by low-pressure organometallic vapor phase ep...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Shingo Fuchi
Youichi Nonogaki
Hiromitsu Moriya 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
39(6A) (通号 521) 2000.06
Volume
39
Issue
6A
Sequential issue number
521
Pages
3290~3293