Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs (Special Issue Solid State Devices & Materials)
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- Material Type
- 記事
- Author/Editor
- Toshiaki TerayamaHiroshi SekineKazuo Tsutsui
- Series Title
- Author Heading
- Periodical title
- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
- No. or year of volume/issue
- 41(4B) (通号 556) (Special Issue) 2002.4
- Volume
- 41
- Issue
- 4B
- Sequential issue number
- 556