SnO2 Separative Structure Extended Gate H〔+〕-Ion Sensitive Field Effect Transistor by the Sol-Gel Technology and the Readout Circuit Developed by Source Follower
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- Material Type
- 記事
- Author/Editor
- Jung-Chuan ChouPik-Kwan KwanZhi-Jie Chen
- Author Heading
- Periodical title
- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
- No. or year of volume/issue
- 42(11) (通号 585) 2003.11
- Volume
- 42
- Issue
- 11
- Sequential issue number
- 585
- Pages
- 6790～6794