Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor (Special Issue: Solid State Devices & Materials)

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Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor(Special Issue: Solid State Devices & Materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
7306643
Material type
記事
Author
Yukinori Onoほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2005-04
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 44(4B) (通号 611) (Special Issue) 2005.4
Publication Page
p.2588~2591
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Detailed bibliographic record

Summary, etc.:

The drain current vs gate-voltage characteristics of a phosphorus-doped n-channel silicon-on-insulator metal-oxide-semiconductor field-effect transist...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Yukinori Ono
Katsuhiko Nishiguchi
Hiroshi Inokawa 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
44(4B) (通号 611) (Special Issue) 2005.4
Volume
44
Issue
4B
Sequential issue number
611