Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow (Special Issue: Microprocesses & Nanotechnology)

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Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow(Special Issue: Microprocesses & Nanotechnology)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
7379478
Material type
記事
Author
Taro Arakawaほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2005-07
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 44(7B) (通号 617) (Special Issue) 2005.7
Publication Page
p.5819~5823
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Detailed bibliographic record

Summary, etc.:

Electron cyclotron resonance reactive ion etching (ECR-RIE) conditions for GaN using CH<SUB>4</SUB>/H<SUB>2</SUB>/Ar are investigated. GaN can be etch...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Taro Arakawa
Yoshiki Awa
Tomoyoshi Ide 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
44(7B) (通号 617) (Special Issue) 2005.7
Volume
44
Issue
7B
Sequential issue number
617