Very Low Interface State Density From Thermally Oxidized Single-Domain 3C-Sic/6H-Sic Grown by Vapour-Liquid-Solid Mechanism
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- Material Type
- 記事
- Author/Editor
- Kin kiong LeeGerhard PenslMaher Soueidan 他
- Author Heading
- Periodical title
- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
- No. or year of volume/issue
- 45(9A) (通号 639) 2006.9
- Volume
- 45
- Issue
- 9A
- Sequential issue number
- 639
- Pages
- 6823～6829