Optical Emission Spectrometry of Plasma in Low-Damage Sub-100nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors (Special Issue: Plasma Processing)

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Optical Emission Spectrometry of Plasma in Low-Damage Sub-100nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors(Special Issue: Plasma Processing)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
8521113
Material type
記事
Author
Xu Liほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2006-10
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45(10B) (通号 642) (Special Issue) 2006.10
Publication Page
p.8364~8369
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Detailed bibliographic record

Summary, etc.:

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌(Provided by: CiNii Research)

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Digital

Material Type
記事
Author/Editor
Xu Li
Haiping Zhou
Chris D. W. Wilkinson 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
45(10B) (通号 642) (Special Issue) 2006.10
Volume
45
Issue
10B
Sequential issue number
642