30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
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- Material Type
- 記事
- Author/Editor
- Masataka HigashiwakiTakashi MimuraToshiaki Matsui
- Author Heading
- Periodical title
- Japanese journal of applied physics. Part 2, Letters & express letters
- No. or year of volume/issue
- 45(42-45) (通号 447) 2006.11
- Volume
- 45
- Issue
- 42-45
- Sequential issue number
- 447
- Pages
- L1111～1113