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Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique

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Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique

Call No. (NDL)
Z54-J337
Bibliographic ID of National Diet Library
8548560
Material type
記事
Author
Kong-Soo Leeほか
Publisher
Tokyo : Japan Society of Applied Physics
Publication date
2006-11
Material Format
Paper
Journal name
Japanese journal of applied physics. Part 2, Letters & express letters 45(42-45) (通号 447) 2006.11
Publication Page
p.L1193～1196
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Paper

Material Type
記事
Title
Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique
Author/Editor
Kong-Soo Lee
Dae-Han Yoo
Jae-Jong Han 他
Author Heading
Kong-Soo Lee
Dae-Han Yoo
Jae-Jong Han
Periodical title
Japanese journal of applied physics. Part 2, Letters & express letters
No. or year of volume/issue
45(42-45) (通号 447) 2006.11
Volume
45
Issue
42-45
Sequential issue number
447
Pages
L1193～1196