Influences of grain boundaries on temperature dependence of device characteristics and on hot carrier effects in low-temperature polycrystalline silicon thin film transistors containing large grains (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materials)

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Influences of grain boundaries on temperature dependence of device characteristics and on hot carrier effects in low-temperature polycrystalline silicon thin film transistors containing large grains(Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
8694558
Material type
記事
Author
Toshiaki Tsuchiyaほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2007-03
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46(3B) (通号 648) 2007.3
Publication Page
p.1312~1317
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Detailed bibliographic record

Summary, etc.:

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌(Provided by: CiNii Research)

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Digital

Material Type
記事
Author/Editor
Toshiaki Tsuchiya
Takafumi Miura
Tsubasa Yamai 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
46(3B) (通号 648) 2007.3
Volume
46
Issue
3B
Sequential issue number
648