InN系窒化物半導体のエピタキシー制御とナノ構造作製
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- Material Type
- 記事
- Author/Editor
- 吉川 明彦崔 成伯王 新強
- Alternative Title
- Epitaxy control of InN-based 3-nitrides towards development of novel nanostructure photonic devices
- Periodical title
- 応用物理
- No. or year of volume/issue
- 76(5) 2007.5
- Volume
- 76
- Issue
- 5
- Pages
- 482～488