招待公演 10nm以下の極薄膜ダブルゲートSOI p-FETにおける高移動度の実証--軽い正孔バンドの役割と一軸性応力エンジニアリングとの整合性 (シリコン材料・デバイス)

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招待公演 10nm以下の極薄膜ダブルゲートSOI p-FETにおける高移動度の実証--軽い正孔バンドの役割と一軸性応力エンジニアリングとの整合性

(シリコン材料・デバイス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
9375907
Material type
記事
Author
小林 茂樹ほか
Publisher
東京 : 電子情報通信学会
Publication date
2008-01-24
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 107(455) 2008.1.24
Publication Page
p.9~12
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Paper

Material Type
記事
Author/Editor
小林 茂樹
齋藤 真澄
内田 建
Alternative Title
High mobility in ultrathin-body double-gate SOI p-FET with sub-10-nm body thickness: role of light-hole band and compatibility with uniaxial stress engineering
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
107(455) 2008.1.24
Volume
107
Issue
455